AGMSEMI AGM320ME

AGMSEMI · FETs & Power MOSFETs · MPN AGM320ME

No reviews yet — be the first to review AGMSEMI AGM320ME.

Specifications

Drain to Source Voltage30V
Configuration-
Gate Charge(Qg)9nC@10V
Output Capacitance(Coss)59pF
Current - Continuous Drain(Id)3.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation1.7W
RDS(on)110mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)315pF

Technical details

N-Channel+P-Channel Array 30V 3.6A 1.7W Surface Mount SOT-23-6L

Related FETs & Power MOSFETs