AGMSEMI AGM320M

AGMSEMI · FETs & Power MOSFETs · MPN AGM320M

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)7nC@10V;9nC@10V
Current - Continuous Drain(Id)8A;6.8A
Output Capacitance(Coss)59pF;47pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V;2.2V
Pd - Power Dissipation1.7W;1W
RDS(on)19.5mΩ@10V;48mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)50pF;40pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)315pF;226pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 30V 8A 1W Surface Mount SOP-8

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