AGMSEMI AGM318MN

AGMSEMI · FETs & Power MOSFETs · MPN AGM318MN

No reviews yet — be the first to review AGMSEMI AGM318MN.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)8.6nC@10V
Output Capacitance(Coss)94pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)16mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)333pF
TypeN-Channel

Technical details

N-Channel Array 30V 8A 3.8W Surface Mount SOP-8

Related FETs & Power MOSFETs