AGMSEMI AGM318MBQ

AGMSEMI · FETs & Power MOSFETs · MPN AGM318MBQ

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)8.6nC@10V
Output Capacitance(Coss)94pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation35.7W
RDS(on)32mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)75pF
Number1 N-channel
Input Capacitance(Ciss)333pF
TypeN-Channel

Technical details

N-Channel 30V 8A 35.7W Surface Mount WQFN-9(3x3)

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