AGMSEMI AGM318MBP

AGMSEMI · FETs & Power MOSFETs · MPN AGM318MBP

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)8.6nC@10V
Output Capacitance(Coss)94pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation35.7W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)16mΩ@10V;24mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)333pF
TypeN-Channel

Technical details

N-Channel Array 30V 8A 35.7W Surface Mount PDFN-8(3.3x3.3)

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