AGMSEMI AGM318MAP

AGMSEMI · FETs & Power MOSFETs · MPN AGM318MAP

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)11nC@10V;19nC@10V
Output Capacitance(Coss)70pF;104pF
Current - Continuous Drain(Id)20A;18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V;1.5V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)60pF;91pF
RDS(on)17mΩ@10V;23mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)441pF;690pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 30V 20A 20W Surface Mount PDFN-8(3.3x3.3)

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