AGMSEMI · FETs & Power MOSFETs · MPN AGM314MD
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| Drain to Source Voltage | 30V;30V |
|---|---|
| Gate Charge(Qg) | 11.7nC@10V;13.2nC@10V |
| Output Capacitance(Coss) | 99pF;101pF |
| Current - Continuous Drain(Id) | 30A;20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V;1.5V |
| Pd - Power Dissipation | 29.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF |
| RDS(on) | 10mΩ@10V;21mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 618pF;689pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel 30V 30A 29.7W Surface Mount TO-252-4