AGMSEMI AGM314MAP

AGMSEMI · FETs & Power MOSFETs · MPN AGM314MAP

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Specifications

Output Capacitance(Coss)102pF;188pF
Pd - Power Dissipation29.7W
Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)11.7nC@10V;13.2nC@10V
Current - Continuous Drain(Id)30A;20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V;1.5V
Reverse Transfer Capacitance (Crss@Vds)91pF;117pF
RDS(on)10mΩ@10V;18.5mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)623pF;750pF

Technical details

N-Channel+P-Channel 30V 30A 29.7W Surface Mount PDFN3.3x3.3

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