AGMSEMI AGM314MA

AGMSEMI · FETs & Power MOSFETs · MPN AGM314MA

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Specifications

Drain to Source Voltage30V;30V
Gate Charge(Qg)11.7nC@10V;13.2nC@10V
Output Capacitance(Coss)95pF;98pF
Current - Continuous Drain(Id)30A;20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V;1.5V
Pd - Power Dissipation29.7W
Reverse Transfer Capacitance (Crss@Vds)85pF;92pF
RDS(on)10mΩ@10V;21mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)618pF;695pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 30V 30A 29.7W Surface Mount PDFN-8L(5x6)

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