AGMSEMI · FETs & Power MOSFETs · MPN AGM312ME
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 4.5nC@10V;4.8nC@10V |
| Output Capacitance(Coss) | 54.5pF;55pF |
| Current - Continuous Drain(Id) | 5.5A;4.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF;42pF |
| RDS(on) | 24mΩ@10V;38mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 390pF;409pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 30V 5.5A 4.4A 1W Surface Mount SOT-23-6