AGMSEMI AGM312MAP

AGMSEMI · FETs & Power MOSFETs · MPN AGM312MAP

No reviews yet — be the first to review AGMSEMI AGM312MAP.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)4.1nC@4.5V;12nC@10V
Output Capacitance(Coss)55pF;94pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V;1.7V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)14mΩ@10V;34mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)345pF;860pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 30V 18A 37W Surface Mount PDFN-8(3.3x3.3)

Related FETs & Power MOSFETs