AGMSEMI AGM312M2

AGMSEMI · FETs & Power MOSFETs · MPN AGM312M2

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Specifications

Gate Charge(Qg)5.8nC@4.5V;16nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)95pF;115pF
Current - Continuous Drain(Id)9A;6.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)33pF;57pF
RDS(on)18mΩ@10V;37mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)510pF;620pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 30V 9A 2.5W Surface Mount SOP-8

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