AGMSEMI AGM312M1

AGMSEMI · FETs & Power MOSFETs · MPN AGM312M1

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Specifications

Gate Charge(Qg)4.1nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)22mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)370pF

Technical details

N-Channel+P-Channel Array 30V 9A 2.5W Surface Mount SOP-8

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