AGMSEMI AGM312D

AGMSEMI · FETs & Power MOSFETs · MPN AGM312D

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Specifications

Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)12nC@4.5V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)63pF
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)295pF

Technical details

N-Channel 30V 20A 31W Surface Mount TO-252

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