AGMSEMI AGM311MN

AGMSEMI · FETs & Power MOSFETs · MPN AGM311MN

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Specifications

Output Capacitance(Coss)130pF
Pd - Power Dissipation2.5W
Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)10nC@10V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)98pF
RDS(on)10.5mΩ@10V;15mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)850pF

Technical details

N-Channel Array 30V 11A 2.5W Surface Mount SOP-8

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