AGMSEMI AGM311MBQ

AGMSEMI · FETs & Power MOSFETs · MPN AGM311MBQ

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)16nC@10V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation41W
Reverse Transfer Capacitance (Crss@Vds)98pF
RDS(on)9.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)850pF

Technical details

N-Channel 30V 28A 41W Surface Mount WQFN3.3x3.3

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