AGMSEMI · FETs & Power MOSFETs · MPN AGM311MAP-M1
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 60nC@10V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 12.5W |
| RDS(on) | 15mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 108pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 850pF |
N-Channel 30V 25A 12.5W PDFN3.3x3.3-8