AGMSEMI AGM311MAP

AGMSEMI · FETs & Power MOSFETs · MPN AGM311MAP

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation12.5W
Reverse Transfer Capacitance (Crss@Vds)108pF
RDS(on)10.5mΩ@10V;15mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)850pF

Technical details

N-Channel Array 30V 25A 12.5W Surface Mount PDFN-8(3.3x3.3)

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