AGMSEMI AGM310MD

AGMSEMI · FETs & Power MOSFETs · MPN AGM310MD

No reviews yet — be the first to review AGMSEMI AGM310MD.

Specifications

Drain to Source Voltage30V;30V
Gate Charge(Qg)16nC@10V;12nC@10V
Output Capacitance(Coss)105pF;113pF
Current - Continuous Drain(Id)23A;18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V;1.7V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)92pF;99pF
RDS(on)11mΩ@10V;22mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)610pF;745pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 30V 23A 37W Surface Mount TO-252-4

Related FETs & Power MOSFETs