AGMSEMI AGM310MAP

AGMSEMI · FETs & Power MOSFETs · MPN AGM310MAP

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Specifications

Gate Charge(Qg)16nC@10V;45nC@10V
Configuration-
Drain to Source Voltage30V;30V
Output Capacitance(Coss)114pF;142pF
Current - Continuous Drain(Id)20A;18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V;1.5V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)98pF;129pF
RDS(on)11mΩ@10V;19mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)636pF;854pF

Technical details

N-Channel+P-Channel 30V 20A 37W Surface Mount PDFN-8(3.3x3.3)

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