AGMSEMI AGM30P85D

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P85D

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)375pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation62W
Reverse Transfer Capacitance (Crss@Vds)288pF
RDS(on)4.9mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.35nF

Technical details

P-Channel 30V 120A 62W Surface Mount TO-252

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