AGMSEMI · FETs & Power MOSFETs · MPN AGM30P55D1
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 28nC |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF |
| RDS(on) | 6.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.05nF |
30V 65A 1.2V 55W 6.5mΩ@4.5V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS