AGMSEMI AGM30P55D

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P55D

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)460pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.05nF
Type-

Technical details

30V 65A 60W Surface Mount TO-252

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