AGMSEMI AGM30P55A

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P55A

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)28nC@10V
Output Capacitance(Coss)460pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)6mΩ@10V;10mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.05nF

Technical details

P-Channel 30V 65A 60W Surface Mount PDFN-8(5x6)

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