AGMSEMI AGM30P35S

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P35S

No reviews yet — be the first to review AGMSEMI AGM30P35S.

Specifications

Gate Charge(Qg)12.5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)34.5mΩ@10V;48.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)650pF
TypeP-Channel

Technical details

P-Channel 30V 6A 2.5W Surface Mount SOP-8

Related FETs & Power MOSFETs