AGMSEMI AGM30P35M

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P35M

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Specifications

Gate Charge(Qg)10.3nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)70.2pF
Current - Continuous Drain(Id)5.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)63pF
RDS(on)70mΩ@4.5V
Number2 P-Channel
Input Capacitance(Ciss)482pF
TypeP-Channel

Technical details

P-Channel 30V 5.4A 2.5W Surface Mount SOP8

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