AGMSEMI AGM30P35D

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P35D

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Specifications

Gate Charge(Qg)12.5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation25.5W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)36.5mΩ@10V;50mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)650pF
TypeP-Channel

Technical details

P-Channel 30V 20A 25.5W Surface Mount TO-252

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