AGMSEMI AGM30P25MBQ

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P25MBQ

No reviews yet — be the first to review AGMSEMI AGM30P25MBQ.

Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)85.5pF
RDS(on)20mΩ@10V;29mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)652pF
TypeP-Channel

Technical details

P-Channel 30V 8A 28W Surface Mount WQFN(3x3)

Related FETs & Power MOSFETs