AGMSEMI AGM30P25MBP

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P25MBP

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)85.7pF
RDS(on)20mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)652pF
TypeP-Channel

Technical details

P-Channel 30V 8A 28W Surface Mount PDFN-8(3.3x3.3)

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