AGMSEMI AGM30P25D

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P25D

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)102pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)89pF
RDS(on)21mΩ@10V;30.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)681pF
TypeP-Channel

Technical details

P-Channel 30V 12A 28W Surface Mount TO-252

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