AGMSEMI AGM30P20M

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P20M

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)11A
Output Capacitance(Coss)135pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)121pF
RDS(on)21mΩ@10V
Number2 P-Channel
Input Capacitance(Ciss)924pF
TypeP-Channel

Technical details

P-Channel 30V 11A 3W Surface Mount SOP-8

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