AGMSEMI AGM30P20AS

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P20AS

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)22nC@10V
Output Capacitance(Coss)183pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation9W
RDS(on)16mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)156pF
Number1 P-Channel
Input Capacitance(Ciss)1.33nF
TypeP-Channel

Technical details

P-Channel 30V 20A 9W Surface Mount DFN-7(2x2)

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