AGMSEMI AGM30P20AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P20AP

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC@10V
Output Capacitance(Coss)94pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)15.5mΩ@10V;24mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)860pF
TypeP-Channel

Technical details

P-Channel 30V 18A 28W Surface Mount PDFN-8(3.3x3.3)

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