AGMSEMI AGM30P18E

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P18E

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)42nC@10V
Output Capacitance(Coss)125pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)109pF
RDS(on)19mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)900pF
TypeP-Channel

Technical details

P-Channel 30V 9A 1.25W Surface Mount SOT-23-3

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