AGMSEMI · FETs & Power MOSFETs · MPN AGM30P16D
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| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF |
| RDS(on) | 16.8mΩ@10V |
| Number | 1 P-Channel |
30V 25A 1.2V 30W 16.8mΩ@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS