AGMSEMI AGM30P16D

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P16D

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)158pF
RDS(on)16.8mΩ@10V
Number1 P-Channel

Technical details

30V 25A 1.2V 30W 16.8mΩ@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS

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