AGMSEMI AGM30P16AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P16AP

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)14nC@10V
Output Capacitance(Coss)194pF
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)158pF
RDS(on)11mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.35nF

Technical details

P-Channel 30V 21A 30W Surface Mount PDFN-8(3.3x3.3)

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