AGMSEMI AGM30P130D

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P130D

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)119nC@10V
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation110W
RDS(on)3.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.027nF
Number1 N-channel
Input Capacitance(Ciss)6.239nF

Technical details

N-Channel 30V 160A 110W Surface Mount TO-252

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