AGMSEMI AGM30P12D

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P12D

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation3.6W
Reverse Transfer Capacitance (Crss@Vds)220pF
RDS(on)11mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.65nF
Vgs±20V

Technical details

P-Channel 30V 35A 3.6W Surface Mount TO-252

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