AGMSEMI AGM30P110A

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P110A

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)150nC@10V
Current - Continuous Drain(Id)138A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation138W
Reverse Transfer Capacitance (Crss@Vds)920pF
RDS(on)2.8mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.2nF

Technical details

P-Channel 30V 138A 138W Surface Mount PDFN-8(5x6)

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