AGMSEMI AGM30P10A

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P10A

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)191pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)141pF
RDS(on)11mΩ@10V;16mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.443nF

Technical details

P-Channel 30V 40A 37W Surface Mount PDFN5X6

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