AGMSEMI · FETs & Power MOSFETs · MPN AGM30P100D
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 122nC@10V |
| Current - Continuous Drain(Id) | 128A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 755pF |
| RDS(on) | 3.7mΩ@10V;5.6mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.77nF |
P-Channel 30V 128A 100W Surface Mount TO-252