AGMSEMI AGM30P100A

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P100A

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Specifications

Gate Charge(Qg)122nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)118A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)755pF
RDS(on)3.7mΩ@10V;5.6mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)5.7nF

Technical details

P-Channel 30V 118A 100W Surface Mount PDFN(5x6)

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