AGMSEMI AGM30P08D

AGMSEMI · FETs & Power MOSFETs · MPN AGM30P08D

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)32nC@10V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)7mΩ@10V;10.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.497nF

Technical details

P-Channel 30V 60A 60W Surface Mount TO-252

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