AGMSEMI AGM30N10D

AGMSEMI · FETs & Power MOSFETs · MPN AGM30N10D

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Specifications

Gate Charge(Qg)8nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)28A
Output Capacitance(Coss)171pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation50W
RDS(on)26mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)3.2pF
Number1 N-channel
Input Capacitance(Ciss)445pF

Technical details

100V 28A 50W Surface Mount TO-252

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