AGMSEMI AGM308MAP

AGMSEMI · FETs & Power MOSFETs · MPN AGM308MAP

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)38nC@10V
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation24W
RDS(on)15mΩ@10V
Number1 N-Channel + 1 P-Channel
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 28A 24W PDFN3.3x3.3-8

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