AGMSEMI AGM307MNQ

AGMSEMI · FETs & Power MOSFETs · MPN AGM307MNQ

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)42A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation21W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)7.5mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)895pF

Technical details

N-Channel Array 30V 42A 21W Surface Mount WQFN5x6

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