AGMSEMI AGM306MNA

AGMSEMI · FETs & Power MOSFETs · MPN AGM306MNA

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Specifications

Configuration-
Gate Charge(Qg)23nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)6.8mΩ
Number2 N-Channel
Input Capacitance(Ciss)1.15nF

Technical details

N-Channel Array 30V 40A 83W QFN5x6-8

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