AGMSEMI AGM306MBQ

AGMSEMI · FETs & Power MOSFETs · MPN AGM306MBQ

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12.8nC@4.5V
Output Capacitance(Coss)163pF
Current - Continuous Drain(Id)46A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)7.3mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)1.07nF

Technical details

N-Channel Array 30V 46A 20W Surface Mount WQFN-8-EP(3.3x3.3)

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