AGMSEMI AGM306D

AGMSEMI · FETs & Power MOSFETs · MPN AGM306D

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)136pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation51W
Reverse Transfer Capacitance (Crss@Vds)118pF
RDS(on)5.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.05nF

Technical details

N-Channel 30V 60A 51W Surface Mount TO-252

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