AGMSEMI AGM306C

AGMSEMI · FETs & Power MOSFETs · MPN AGM306C

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)34nC@10V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation51W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)8.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.07nF

Technical details

N-Channel 30V 60A 51W Through Hole TO-220

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