AGMSEMI · FETs & Power MOSFETs · MPN AGM306C
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 34nC@10V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 51W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 8.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.07nF |
N-Channel 30V 60A 51W Through Hole TO-220